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79LV0408
Low Voltage 4 Megabit (512k x 8-bit) EEPROM
CE 1 RS E R /B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 CE 2 CE 3 CE 4
I/O0-7
Logic Diagram
Memory
FEATURES:
* Four 128k x 8-bit EEPROMs MCM * RAD-PAK(R) radiation-hardened against natural space radiation * Total dose hardness: - > 100 krad (Si), depending upon space mission * Excellent Single Event Effects - SEL > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode - SEU = 18 MeV/mg/cm2 write mode * Package: * - 40 pin RAD-PAK(R) flat pack * - 40 pin X-Ray PakTM flat pack * - 40 pin Rad-Tolerant flat pack * High speed: -200 and 250 ns access times available * Data Polling and Ready/Busy signal * Software data protection * Write protection by RES pin * High endurance - 10,000 erase/write (in Page Mode), - 10 year data retention * Page write mode: 1 to 128 byte page * Low power dissipation - 88 mW/MHz active mode - 440 W standby mode
DESCRIPTION:
Maxwell Technologies' 79LV0408 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. Using Maxwell Technologies' patented radiation-hardened RAD-PAK(R) MCM packaging technology, the 79LV0408 is the first radiationhardened 4 Megabit MCM EEPROM for space applications. The 79LV0408 uses four 1 Megabit high-speed CMOS die to yield a 4 Megabit product. The 79LV0408 is capable of in-system electrical Byte and Page programmability. It has a 128 bytes Page Programming function to make its erase and write operations faster. It also features Data Polling and a Ready/ Busy signal to indicate the completion of erase and programming operations. In the 79LV0408, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal. Software data protection is implemented using the JEDEC optional standard algorithm. Maxwell Technologies' patented RAD-PAK(R) packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, the RAD-PAK(R) package provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Maxwell Technologies self-defined Class K.
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(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
DESCRIPTION
TABLE 1. 79LV0408 PIN DESCRIPTION
PIN 16-9, 32-31, 28, 30, 8, 33, 7, 36, 6 17-19, 22-26 29 2, 3, 39, 38 34 1, 27, 40 4, 20, 21, 37 5 35 SYMBOL A0 to A16 Address Input
I/O0 to I/O7 OE CE1-4 WE VCC VSS RDY/BUSY RES
Data Input/Output Output Enable Chip Enable 1 through 4 Write Enable Power Supply Ground Ready/Busy Reset
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TABLE 2. 79LV0408 ABSOLUTE MAXIMUM RATINGS
PARAMETER Supply Voltage Input Voltage Package Weight Thermal Resistance ( RP Package) Operating Temperature Range Storage Temperature Range SYMBOL VCC VIN RP RT Tjc TOPR TSTG -55 -65 MIN -0.6 -0.51 MAX 7.0 7.0 23 10 7.3 125 150
C/W C C
UNIT V V Grams
1. VIN MIN = -3.0V FOR PULSE WIDTH <50NS.
TABLE 3. 79LV0408 RECOMMENDED OPERATING CONDITIONS
PARAMETER Supply Voltage Input Voltage RES_PIN Case Operating Temperature 1. VIL min = -1.0V for pulse width < 50 ns SYMBOL VCC VIL VIH VH TC MIN 3.0 -0.31 2.2 VCC-0.5 -55 MAX 3.6 0.8 VCC +0.3 VCC +1 125 UNIT V V V V
C
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
TABLE 4. 79LV0408 CAPACITANCE1
(TA = 25 C, f = 1 MHz) PARAMETER Input Capacitance: VIN = 0 V WE CE1-4 OE A0-16
1
SYMBOL CIN
MIN -----
MAX 24 6 24 24 48
UNIT pf
Output Capacitance: VOUT = 0 V 1 1. Guaranteed by design.
COUT
pF
TABLE 5. DELTA PARAMETERS
PARAMETER ICC1 ICC2 ICC3 ICC4 CONDITION + 10% of value in Table 6 + 10% of value in Table 6 + 10% of value in Table 6 + 10% of value in Table 6
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TABLE 6. 79LV0408 DC ELECTRICAL CHARACTERISTICS
(VCC = 3.3V 10%, TA = -55 TO +125C) PARAMETER Input Leakage Current TEST CONDITION VCC = 5.5V, VIN = 5.5V1 CE1-4 OE, WE A0-16 Output Leakage Current VCC = 5.5V, VOUT = 5.5V/0.4V Standby VCC Current Operating VCC Current2 CE = VCC CE = VIH IOUT = 0mA, Duty = 100%, Cycle = 1 s at VCC = 5.5V IOUT = 0mA, Duty = 100%, Cycle = 150ns at VCC = 5.5V Input Voltage RES_PIN Output Voltage IOL = 2.1 mA IOH = -0.4 mA ILO ICC1 ICC2 ICC3 ICC4 VIL VIH VH VOL VOH 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 SYMBOL IIL SUBGROUPS 1, 2, 3 ---------2.2 VCC -0.5 -2.4 21 8 8 8 80 4 15 50 0.8 --0.4 -V V A A mA mA MIN MAX UNITS A
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
1. ILI on RES = 100 uA max. 2. Only on CE\ Active.
TABLE 7. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATIONS1
(VCC = 3.3V 10%, TA = -55 TO +125C) PARAMETER Address Access Time CE = OE = VIL, WE = VIH -200 -250 Chip Enable Access Time OE = VIL, WE = VIH -200 -250 Output Enable Access Time CE = VIL, WE = VIH -200 -250 Output Hold to Address Change CE = OE = VIL, WE = VIH -200 -250 Output Disable to High-Z2 CE = VIL, WE = VIH -200 -250 CE = OE = VIL, WE = VIH -200 -250 RES to Output Delay CE = OE = VIL, WE = VIH 3 -200 -250 SYMBOL tACC SUBGROUPS 9, 10, 11 --tCE 9, 10, 11 0 0 tOE 9, 10, 11 0 0 tOH 9, 10, 11 0 0tDF 9, 10, 11 0 0 tDFR 9, 10, 11 0 0 tRR 9, 10, 11 --520 550 300 350 ns 60 60 --ns 110 120 200 250 ns 200 250 ns MIN MAX UNIT ns
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ns
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V. 2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design.
TABLE 8. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(VCC = 3.3V 10%, TA = -55 TO +125C) PARAMETER Address Setup Time -200 -250 SYMBOL tAS SUBGROUPS 9, 10, 11 0 0 --MIN1 MAX UNIT ns
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
MIN1 0 0 9, 10, 11 MAX --ns 200 250 200 250 9, 10, 11 125 150 --ns 100 100 --ns 10 10 --ns 0 0 --ns 0 0 --ns 0 0 --ns 0 0 --ns 0 0 --ms --15 15 ns 700 750 --s 100 100 ------ns UNIT ns
TABLE 8. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(VCC = 3.3V 10%, TA = -55 TO +125C) PARAMETER Chip Enable to Write Setup Time (WE Controlled) -200 -250 Write Pulse WidthCE Controlled -200 -250 WE Controlled -200 -250 Address Hold Time -200 -250 Data Setup Time -200 -250 Data Hold Time -200 -250 Chip Enable Hold Time (WE Controlled) -200 -250 Write Enable to Write Setup Time (CE Controlled) -200 -250 Write Enable Hold Time (CE Controlled) -200 -250 Output Enable to Write Setup Time -200 -250 Output Enable Hold Time -200 -250 Write Cycle Time2 -200 -250 Data Latch Time -200 -250 Byte Load Window -200 -250 SYMBOL tCS SUBGROUPS 9, 10, 11
tCW
tWP tAH
tDS
9, 10, 11
Memory
tDH
9, 10, 11
tCH
9, 10, 11
tWS
9, 10, 11
tWH
9, 10, 11
tOES
9, 10, 11
tOEH
9, 10, 11
tWC
9, 10, 11
tDL
9, 10, 11
tBL
9, 10, 11
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
MIN1 1 1 MAX --ns 150 150 --ns 150 150 --s 100 100 --s 1 1 --UNIT s
TABLE 8. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(VCC = 3.3V 10%, TA = -55 TO +125C) PARAMETER Byte Load Cycle -200 -250 Time to Device Busy -200 -250 Write Start Time3 -200 -250 RES to Write Setup Time -200 -250 VCC to RES Setup Time4 -200 -250 1. Use this divice in a longer cycle than this value. 2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used. 4. Guaranteed by design. SYMBOL tBLC SUBGROUPS 9, 10, 11
tDB
9, 10, 11
tDW
9, 10, 11
tRP
9, 10, 11
tRES
9, 10, 11
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TABLE 9. 79LV0408 MODE SELECTION 1, 2
PARAMETER Read Standby Write Deselect Write Inhibit Data Polling Program 1. X = Don't care. 2. Refer to the recommended DC operating conditions. 3. For CE1-4 only one CE can be used ("on") at a time. CE 3 VIL VIH VIL VIL X X VIL X OE VIL X VIH VIH X VIL VIL X WE VIH X VIL VIH VIH X VIH X I/O DOUT High-Z DIN High-Z --Data Out (I/O7) High-Z RES VH X VH VH X X VH VIL RDY/BUSY High-Z High-Z High-Z --> VOL High-Z --VOL High-Z
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Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
FIGURE 1. READ TIMING WAVEFORM
79LV0408
Memory
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
79LV0408
Memory
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
79LV0408
Memory
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
79LV0408
Memory
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED)
79LV0408
Memory
FIGURE 6. DATA POLLING TIMING WAVEFORM
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE)
FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE)
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Toggle Bit Waveform
EEPROM APPLICATION NOTES
This application note describes the programming procedures for each EEPROM module (four in each MCM) and details of various techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows from 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading the first byte of data, the data load window opens 30 s for the second byte. In the same manner each additional byte of data can be loaded within 30 s. In case CE and WE are kept high for 100 s after data input, the EEPROM enters erase and write mode automatically and only the input data are written into the EEPROM.
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
WE CE Pin Operation
79LV0408
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If the EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded output is from I/O 7 to indicate that the EEPROM is performing a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to VOL after the first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance.
RES Signal
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when VCC is switched. RES should be kept high during read and programming because it doesn't provide a latch function.
Memory
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.
2. Data Protection at VCC on/off
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When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to RES pin.
RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES becomes low, programming operation doesn't finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data input.
10mS min 3. Software Data Protection The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode.
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.
Memory
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
Pin #1 ID
Memory
40 PIN RAD-PAK(R) PACKAGE DIMENSIONS
SYMBOL MIN A b c D E E1 E2 E3 e L Q S1 N 0.380 0.214 0.005 0.248 0.013 0.006 -0.985 -0.890 0.000 DIMENSION NOM 0.274 0.015 0.008 0.850 0.995 -0.895 0.050 0.040 BSC 0.390 0.245 0.038 40 0.400 0.270 -MAX 0.300 0.022 0.010 0.860 1.005 1.025 ---
F40-01 Note: All dimensions in inches 16
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
Memory
40 PIN X-RAY-PAKTM FLAT PACKAGE DIMENSIONS
SYMBOL MIN A b c D E E2 E3 e L Q S1 N 0.340 0.050 -0.248 0.013 0.006 0.840 0.985 --DIMENSION NOM 0.274 0.015 0.008 0.850 0.995 0.785 0.105 0.040 BSC 0.350 0.065 0.035 40 0.400 0.075 -MAX 0.300 0.022 0.010 0.860 1.005 ---
NOTE: All Dimensions in Inches
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
Memory
40 PIN RAD-TOLERANT FLAT PACKAGE DIMENSIONS
SYMBOL MIN A b c D E E1 E2 E3 e L Q S1 N 0.380 0.190 0.005 0.202 0.013 0.006 -0.985 -0.890 0.000 DIMENSION NOM 0.224 0.015 0.008 0.850 0.995 -0.895 0.050 0.040 BSC 0.390 0.220 0.038 40 0.400 0.270 -MAX 0.246 0.022 0.010 0.860 1.005 1.025 ---
NOTE: All Dimensions in Inches
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
Important Notice:
79LV0408
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies' products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies. must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies' liability shall be limited to replacement of defective parts.
Memory
Product Ordering Options
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(c)2005 Maxwell Technologies All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
Model Number 79LV0408 XX F X -XX Feature Access Time Option Details
20 = 200 ns 25 = 250 ns
Screening Flow
Multi Chip Module (MCM)1 K = Maxwell Self-Defined Class K H = Maxwell Self-Defined Class H I = Engineering (testing @-55C, +25C and +125C) E = Engineering (testing @ +25C
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Package
F = Flat Pack
Radiation Feature
RP = RAD-PAK(R) package RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at die level XP = X-Ray Pak 4 Megabit (512k x 8-bit) EEPROM MCM
Base Product Nomenclature
1) Products are manufactured and screened to Maxwell Technologies self-defined Class H and Class K flows.
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(c)2005 Maxwell Technologies All rights reserved.

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